2SC5856 2006-11-22 1 toshiba transistor silicon npn triple diffused mesa type 2SC5856 horizontal deflection output for super high resolution display, color tv, digital tv high speed switching applications z high voltage : v cbo = 1500 v z low saturation voltage : v ce (sat) = 3 v (max) z high speed : t f(2) = 0.1 s (typ.) absolute maximum ratings (tc = 25c) characteristic symbol rating unit collector ? base voltage v cbo 1500 v collector ? emitter voltage v ceo 700 v emitter ? base voltage v ebo 5 v dc i c 14 collector current pulse i cp 28 a base current i b 7 a collector power dissipation p c 55 w junction temperature t j 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon review ing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and in dividual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm jedec D jeita D toshiba 2-16e3a weight: 5.5 g (typ.)
2SC5856 2006-11-22 2 electrical characteristics (tc = 25c) characteristic symbol test condition min typ. max unit collector cut ? off current i cbo v cb = 1500 v, i e = 0 D D 1 ma emitter cut ? off current i ebo v eb = 5 v, i c = 0 D D 100 a collector ? emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 700 D D v h fe (1) v ce = 5 v, i c = 2 a 20 D 50 h fe (2) v ce = 5 v, i c = 7.5 a 6.5 D 12.5 dc current gain h fe (3) v ce = 5 v, i c = 11 a 4.5 D 7.8 D collector ? emitter saturation voltage v ce (sat) i c = 11 a, i b = 2.75 a D D 3 v base ? emitter saturation voltage v be (sat) i c = 11 a, i b = 2.75 a D 1.0 1.4 v transition frequency f t v ce = 10 v, i c = 0.1 a D 2 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 180 D pf storage time t stg(1) D 3.5 D fall time t f(1) i cp = 7.5 a , i b1 (end) = 1.0 a f h = 32 khz D 0.25 D s storage time t stg(2) D 1.8 D switching time fall time t f(2) i cp = 6.5 a, i b1 (end) = 0.9 a f h = 100 khz D 0.1 D s
2SC5856 2006-11-22 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) 10 0 0 16 12 4 2 4 6 8 10 8 20 0.6 1.5 2.0 i b = 0.2 a 4.0 2.5 common emitter tc = 2 5 0.8 1.2 0.4 1.0 3.0 3.5 collector current i c (a) base ? emitter voltage v be (v) i c ? v be ? 25 25 tc = 100c 0 16 12 4 8 20 0 0.2 0.4 0.6 1.0 1.4 1.2 common emitter v ce = 5 v 0.8 collector current i c (a) h fe ? i c dc current gain h fe 100 1 0.01 tc = 100c ? 25 25 0.1 10 100 10 common emitter v ce = 5 v 1
2SC5856 2006-11-22 4 collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) 10 0.1 0.01 1 100 1 10 common emitter tc = 100 8 6 10 i c / i b = 4 base current i b (a) v ce ? i b collector-emitter voltage v ce (v) 0 8 6 2 4 10 6 i c = 11 a 5 common emitter tc = ? 25 7 4.0 0 0.8 1.6 3.2 2.4 8 9 10 base current i b (a) v ce ? i b collector-emitter voltage v ce (v) common emitter tc = 2 5 0 8 6 2 4 10 4.0 0 0.8 1.6 3.2 2.4 6 i c = 11 a 5 7 8 9 10 v ce(sat) ? i c collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) 0.01 1 1 0.1 10 10 100 8 6 10 i c / i b = 4 common emitter tc = ? 25 collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) 100 1 10 0.1 0.01 10 1 common emitter tc = 2 5 8 6 10 i c / i b = 4 collector-emitter voltage v ce (v) base current i c (a) v ce ? i b 4.0 0 0.8 1.6 3.2 2 2.4 8 6 2 4 10 6 i c = 11 a 5 7 8 9 10 common emitter tc = 1 0 0
2SC5856 2006-11-22 5 collector power dissipation p c (w) case temperature tc (c) p c ? tc 0 0 25 75 100 125 150 20 60 80 100 40 50 infinite heat sink r th(j-c) ? t w transient thermal impedance (junction ? case) r th(j-c) (c/w) pulse width t w (s) 10 0.001 10 1000 100 1m 100m 10 100 0.01 1 0.1 10m 1 tc = 25 (infinite heat sink) curves should be applied in thermal limited area. (single nonrepetitive pulse) collector-emitter voltage v ce (v) safe operating area collector current i c (a) 0.01 100 1 ms* 10 ms* v ceo max 100 s* 100 ms* i c max (continuous) 1 100 1000 10 1 10 0.1 10 s* dc operation tc = 25c *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i c max (pulse)* collector-emitter voltage v ce (v) reverse bias ? safe operating area collector current i c (a) 100 0.1 0.001 10 10000 10 100 1 0.01 1000 v cbo max i c max (pulse) 420v,28a 1500v,18ma ta = 2 5 non repeated pulse i b 2 = ? 3a l = 500 h
2SC5856 2006-11-22 6 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utiliz ing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliab ility or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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